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EP 0297778 A3 1991-04-03     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0297778 A2 1989-01-04     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16

EP 0297778    KR 0134096 B1 1998-04-20     Title (TI): APPARATUS INCLUDING RESONANT TUNNELING DEVICE HVING MULTIPLE-PEAK CURRENT VOLTAGE CHARACTERISTICS Inventor: CAPASS FEDERICO (US);   YI CHO ALFRED (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: KR19880008140 1988-06-30 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L29/86; H01L29/66 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 1929398 C 1995-05-12     Title (TI): SEMICONDUCTOR DEVICE Inventor: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Applicant: AMERICAN TELEPHONE & TELEGRAPH Application Number: JP19880162791 1988-07-01 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 6052789 B 1994-07-06     Title (TI): SEMICONDUCTOR DEVICE Inventor: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Applicant: AMERICAN TELEPHONE & TELEGRAPH Application Number: JP19880162791 1988-07-01 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    KR 9302817 B1 1993-04-10     Title (TI): RESONANT-TUNNELING DEVICE Inventor: CAPASSO FEDERICO (US);   CHO ALFRED E (US);   SEN SUSANTA (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: KR19880014355 1988-11-02 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: H01L27/10 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88    CA 1284234 C 1991-05-14     Title (TI): APPARATUS INCLUDING RESONANT-TUNNELING DEVICE HAVING MULTIPLE-PEAK CURRENT-VOLTAGE CHARACTERISTICS Inventor: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: CA19880570741 1988-06-29 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L27/06; G11C11/56; H01L29/88 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    CA 1282871 C 1991-04-09     Title (TI): RESONANT-TUNNELING DEVICE, AND MODE OF DEVICE OPERATION Inventor: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: CA19880582271 1988-11-04 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/56; H01L29/80 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88    EP 0297778 A3 1991-04-03     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A3 1990-05-09     Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88    US 4902912 A 1990-02-20     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics Inventor: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US);   SHOJI MASAKAZU (US);   SIVCO DEBORAH (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: US19890366340 1989-06-13 Priority Number(s): US19890366340 1989-06-13   US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L29/205; H01L29/88 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    JP 2003142 A 1990-01-08     Title (TI): SEMICONDUCTOR DEVICE Inventor: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN Applicant: AMERICAN TELEPHONE & TELEGRAPH Application Number: JP19880277613 1988-11-04 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; H01L27/10; H01L29/80; H01L29/804 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88    US 4853753 A 1989-08-01     Title (TI): Resonant-tunneling device, and mode of device operation Inventor: CAPASSO FEDERICO (US);   CHO ALFRED Y (US);   SEN SUSANTA (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: US19870117583 1987-11-05 Priority Number(s): US19870117583 1987-11-05   US19870068974 1987-07-01 EPC-Classification: G11C11/38; G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/38; G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0320110 A2 1989-06-14     Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88    JP 1039768 A 1989-02-10     Title (TI): SEMICONDUCTOR DEVICE Inventor: FUEDERIKO KIYAPASO;   ARUFURETSUDO II CHIYOO;   SUZANTA SEN;   MASAKAZU SHIYOOJI;   DEBUORAA SHIBUKO Applicant: AMERICAN TELEPHONE & TELEGRAPH Application Number: JP19880162791 1988-07-01 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: H01L27/08; H01L27/10; H01L29/203; H01L29/66; H01L29/88; H03K5/00; H03K17/58; H03K19/20; H03M13/00 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16    EP 0297778 A2 1989-01-04     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16

Cited Documents

Citatory Documents

Non Patent Literature
SR: ELECTRONICS LETTERS, vol. 23, no. 5, 26th February 1987, pages 225-226; F. CAPASSO et al.: "Resonant tunnelling gate field-effect transistor" SR: IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 7, July 1987, pages 297-299; F. CAPASSO et al.: "Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications" SR: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-34, no. 10, October 1987, pages 2185-2191; S. SEN et al.: "Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity"
EP 0320110 A3 1990-05-09     Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88  EP 0320110 A2 1989-06-14  SR   Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88  DE 2607940 A1 1977-09-08  SR   Inventor: TSU RAPHAEL Applicant: MAX PLANCK GESELLSCHAFT Application Number: DE19762607940 1976-02-27 Priority Number(s): DE19762607940 1976-02-27 EPC-Classification: H01L21/203C; H01L21/363; H01L29/15B2C; H01L29/165; H01L29/205; H01L29/76C IPC-Classification: H01L29/267 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L21/203; H01L21/363; H01L29/15; H01L29/165; H01L29/205; H01L29/76	EP 0708487 B1 2001-08-29  CA   Title (TI): Memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI EUROP LTD (GB) Application Number: EP19950304591 1995-06-29 Priority Number(s): GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L29/88; H01L27/102 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  EP 0364987 B1 1996-05-22     Title (TI): Semiconductor device. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Applicant: HITACHI LTD (JP) Application Number: EP19890119349 1989-10-18 Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0708487 A1 1996-04-24  CA   Title (TI): Memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI EUROP LTD (GB) Application Number: EP19950304591 1995-06-29 Priority Number(s): GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L29/88; H01L27/102 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  EP 0364987 A3 1991-03-13     Title (TI): Semiconductor device. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Applicant: HITACHI LTD (JP) Application Number: EP19890119349 1989-10-18 Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0364987 A2 1990-04-25  SR   Title (TI): Semiconductor device. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU Applicant: HITACHI LTD (JP) Application Number: EP19890119349 1989-10-18 Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21 EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56

Collateral Citatory Documents of Cited Documents

Collateral Cited Documents of Citatory Documents

EP 0708487 B1 2001-08-29  SR   Title (TI): Memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI EUROP LTD (GB) Application Number: EP19950304591 1995-06-29 Priority Number(s): GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L29/88; H01L27/102 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  US 6194303 B1 2001-02-27  CA   Title (TI): Memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI LTD (US) Application Number: US19980082302 1998-05-20 Priority Number(s): US19980082302 1998-05-20   US19950544752 1995-10-18   GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L21/44 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  US 5811832 A 1998-09-22  SR   Title (TI): Non-volatile memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI LTD (JP) Application Number: US19950544752 1995-10-18 Priority Number(s): GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L29/88; G11C11/56; H01L27/102; H01L29/205 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  US 5543749 A 1996-08-06  SR   Title (TI): Resonant tunneling transistor Inventor: AWANO YUJI (JP) Applicant: FUJITSU LTD (JP) Application Number: US19940363989 1994-12-27 Priority Number(s): US19940363989 1994-12-27   JP19860053725 1986-03-13   US19920985243 1992-12-02   US19910690396 1991-04-25   US19890416004 1989-10-02   US19890323244 1989-03-13   US19870025652 1987-03-13 EPC-Classification: H01L29/15B2C; H01L29/76C IPC-Classification: H01L29/737; H01L29/15 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  EP 0708487 A1 1996-04-24  SR   Title (TI): Memory device Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB) Applicant: HITACHI EUROP LTD (GB) Application Number: EP19950304591 1995-06-29 Priority Number(s): GB19940021138 1994-10-20 EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R IPC-Classification: H01L29/88; H01L27/102 CI-Classification: G11C11/56; H01L27/102; H01L29/66 AI-Classification: G11C11/56; H01L27/102; H01L29/88  EP 0238406 B1 1993-06-02     Title (TI): Heterojunction semiconductor device. Inventor: AWANO YUJI HAISHITI OMOTASANDO Applicant: FUJITSU LTD (JP) Application Number: EP19870400571 1987-03-13 Priority Number(s): JP19860053725 1986-03-13 EPC-Classification: H01L29/15B2C; H01L29/76C IPC-Classification: H01L29/76; H01L29/203 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  EP 0521696 A1 1993-01-07  SR   Title (TI): Self-doped high performance complementary heterojunction field effect transistor. Inventor: ZHU THEODORE X (US);   OOMS WILLIAM J (US);   ABROKWAH JONATHAN K (US);   GORONKIN HERBERT (US);   SHURBOFF CARL L (US) Applicant: MOTOROLA INC (US) Application Number: EP19920306029 1992-06-30 Priority Number(s): US19910724077 1991-07-01 EPC-Classification: H01L27/06C; H01L27/092D; H01L29/10D2; H01L29/80B IPC-Classification: H01L29/10; H01L29/76 CI-Classification: H01L27/06; H01L27/085; H01L29/02; H01L29/66 AI-Classification: H01L27/06; H01L27/092; H01L29/10; H01L29/80  EP 0177374 B1 1992-04-15     Title (TI): High-speed semiconductor device. Inventor: YOKOYAMA NAOKI Applicant: FUJITSU LTD (JP) Application Number: EP19850401440 1985-07-15 Priority Number(s): JP19840179178 1984-08-30 EPC-Classification: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Classification: H01L29/08; H01L29/205 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/205; H01L29/76  DE 3737572 C2 1991-11-28     Title (TI): Controllable quantum pot structure Inventor: BENEKING HEINZ PROF DR RER NAT (DE) Applicant: LICENTIA GMBH (DE);   TELEFUNKEN ELECTRONIC GMBH (DE) Application Number: DE19873737572 1987-11-05 Priority Number(s): DE19873737572 1987-11-05 EPC-Classification: H01L29/737B6 IPC-Classification: H01L23/48; H01L29/06; H01L29/36; H01L29/68; H01L29/72; H01L29/86 CI-Classification: H01L29/66 AI-Classification: H01L29/737  US 5059545 A 1991-10-22  SR   Title (TI): Three terminal tunneling device and method Inventor: FRENSLEY WILLIAM R (US);   REED MARK A (US) Applicant: TEXAS INSTRUMENTS INC (US) Application Number: US19900559521 1990-07-24 Priority Number(s): US19900559521 1990-07-24   US19880231622 1988-08-08   US19850768542 1985-08-23 EPC-Classification: H01L29/76C IPC-Classification: H01L21/205 CI-Classification: H01L29/66 AI-Classification: H01L29/76  US RE33671 E 1991-08-20  SR   Title (TI): Method of making high mobility multilayered heterojunction device employing modulated doping Application Number: US19870058668 1987-05-26 Priority Number(s): US19870058668 1987-05-26   US19780899402 1978-04-24   US19790026090 1979-04-02   US19840657051 1984-10-03 EPC-Classification: H01L29/205; H01L29/778C2 IPC-Classification: H01L21/203; H01L29/38 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/205; H01L29/778  EP 0251352 B1 1991-08-14     Title (TI): Hot charge-carrier transistors. Inventor: SHANNON JOHN MARTIN Applicant: PHILIPS ELECTRONIC ASSOCIATED (GB);   PHILIPS NV (NL) Application Number: EP19870200888 1987-05-14 Priority Number(s): GB19860012603 1986-05-23 EPC-Classification: H01L29/15B2; H01L29/76C IPC-Classification: H01L29/76; H01L29/08; H01L29/10; H01L29/14 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  US 5032877 A 1991-07-16  SR   Title (TI): Quantum-coupled ROM Inventor: BATE ROBERT T (US) Applicant: TEXAS INSTRUMENTS INC (US) Application Number: US19840626808 1984-07-02 Priority Number(s): US19840626808 1984-07-02 EPC-Classification: H01L27/112; H01L29/76D IPC-Classification: H01L29/88; G11C11/40 CI-Classification: H01L27/112; H01L29/66 AI-Classification: H01L27/112; H01L29/76  EP 0297778 A3 1991-04-03     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16  US 4969018 A 1990-11-06  SR   Title (TI): Quantum-well logic using self-generated potentials Inventor: REED MARK A (US) Applicant: TEXAS INSTRUMENTS INC (US) Application Number: US19840626807 1984-07-02 Priority Number(s): US19840626807 1984-07-02 EPC-Classification: H01L29/15B; H01L29/15D; H01L29/32; H01L29/76C IPC-Classification: H01L29/88 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/32; H01L29/76  US 4956681 A 1990-09-11  SR   Title (TI): Ternary logic circuit using resonant-tunneling transistors Inventor: YOKOYAMA NAOKI (JP);   TAGUCHI MASAO (JP) Applicant: FUJITSU LTD (JP) Application Number: US19890310463 1989-02-15 Priority Number(s): JP19850223690 1985-10-09 EPC-Classification: F16L55/00; G11C11/39; G11C11/56; H03K3/29; H03K3/36 IPC-Classification: H01L27/12; H01L45/00; H01L49/02 CI-Classification: F16L55/00; G11C11/39; G11C11/56; H03K3/00 AI-Classification: F16L55/00; G11C11/39; G11C11/56; H03K3/29; H03K3/36  US 4912531 A 1990-03-27  SR   Title (TI): Three-terminal quantum device Inventor: REED MARK A (US);   BATE ROBERT T (US) Applicant: TEXAS INSTRUMENTS INC (US) Application Number: US19840626551 1984-06-29 Priority Number(s): US19840626551 1984-06-29 EPC-Classification: H01L21/335P4; H01L29/15B; H01L29/15D; H01L29/32; H01L29/76C IPC-Classification: H01L29/205; H01L29/88 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L21/335; H01L29/15; H01L29/32; H01L29/76  US 4903101 A 1990-02-20  SR   Title (TI): Tunable quantum well infrared detector Inventor: MASERJIAN JOSEPH (US) Applicant: CALIFORNIA INST OF TECHN (US) Application Number: US19880174111 1988-03-28 Priority Number(s): US19880174111 1988-03-28 EPC-Classification: H01L27/146F3; H01L31/0352B IPC-Classification: H01L27/14 CI-Classification: H01L27/146; H01L31/0248 AI-Classification: H01L27/146; H01L31/0352  DE 3811801 A1 1989-10-19  SR   Inventor: GOLD ALFRED DR RER NAT (DE) Applicant: SIEMENS AG (DE) Application Number: DE19883811801 1988-04-08 Priority Number(s): DE19883811801 1988-04-08 EPC-Classification: H01L29/205; H01L29/32; H01L29/772D IPC-Classification: H01L29/267; H01L29/78 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/205; H01L29/32; H01L29/772  DE 3737572 A1 1989-05-24  SR   Title (TI): Controllable quantum pot structure Inventor: BENEKING HEINZ PROF DR RER NAT (DE) Applicant: LICENTIA GMBH (DE);   TELEFUNKEN ELECTRONIC GMBH (DE) Application Number: DE19873737572 1987-11-05 Priority Number(s): DE19873737572 1987-11-05 EPC-Classification: H01L29/737B6 IPC-Classification: H01L23/48; H01L29/06; H01L29/36; H01L29/68; H01L29/72; H01L29/86 CI-Classification: H01L29/66 AI-Classification: H01L29/737  EP 0297778 A2 1989-01-04  SR   Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0251352 A1 1988-01-07  SR   Title (TI): Hot charge-carrier transistors. Inventor: SHANNON JOHN MARTIN Applicant: PHILIPS ELECTRONIC ASSOCIATED (GB);   PHILIPS NV (NL) Application Number: EP19870200888 1987-05-14 Priority Number(s): GB19860012603 1986-05-23 EPC-Classification: H01L29/15B2; H01L29/76C IPC-Classification: H01L29/76; H01L29/08; H01L29/10; H01L29/14 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  EP 0177374 A3 1987-11-25     Title (TI): High-speed semiconductor device. Inventor: YOKOYAMA NAOKI Applicant: FUJITSU LTD (JP) Application Number: EP19850401440 1985-07-15 Priority Number(s): JP19840179178 1984-08-30 EPC-Classification: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Classification: H01L29/08; H01L29/205 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/205; H01L29/76  EP 0238406 A3 1987-11-19     Title (TI): Heterojunction semiconductor device. Inventor: AWANO YUJI HAISHITI OMOTASANDO Applicant: FUJITSU LTD (JP) Application Number: EP19870400571 1987-03-13 Priority Number(s): JP19860053725 1986-03-13 EPC-Classification: H01L29/15B2C; H01L29/76C IPC-Classification: H01L29/76; H01L29/203 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  EP 0238406 A2 1987-09-23  SR   Title (TI): Heterojunction semiconductor device. Inventor: AWANO YUJI HAISHITI OMOTASANDO Applicant: FUJITSU LTD (JP) Application Number: EP19870400571 1987-03-13 Priority Number(s): JP19860053725 1986-03-13 EPC-Classification: H01L29/15B2C; H01L29/76C IPC-Classification: H01L29/76; H01L29/203 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/76  US 4675711 A 1987-06-23  SR   Title (TI): Low temperature tunneling transistor Inventor: HARDER CHRISTOPH S (CH);   WOLF HANS P (CH);   BAECHTOLD WERNER (CH);   GUERET PIERRE L (CH);   BARATOFF ALEXIS (CH) Applicant: IBM (US) Application Number: US19850798653 1985-11-15 Priority Number(s): EP19840115428 1984-12-18 EPC-Classification: H01L29/772 IPC-Classification: H01L29/12; H01L29/66; H01L29/80 CI-Classification: H01L29/66 AI-Classification: H01L29/772  EP 0177374 A2 1986-04-09  SR   Title (TI): High-speed semiconductor device. Inventor: YOKOYAMA NAOKI Applicant: FUJITSU LTD (JP) Application Number: EP19850401440 1985-07-15 Priority Number(s): JP19840179178 1984-08-30 EPC-Classification: H01L29/15B2; H01L29/15B2C; H01L29/205; H01L29/76C IPC-Classification: H01L29/08; H01L29/205 CI-Classification: H01L29/02; H01L29/66 AI-Classification: H01L29/15; H01L29/205; H01L29/76  EP 0068064 A1 1983-01-05  SR   Title (TI): Semiconductor circuit including a resonant quantum mechanical tunnelling triode device. Inventor: ESAKI LEO Applicant: IBM (US) Application Number: EP19820100162 1982-01-12 Priority Number(s): US19810280141 1981-06-30 EPC-Classification: H01L29/76C IPC-Classification: H01L29/76; H01L29/205 CI-Classification: H01L29/66 AI-Classification: H01L29/76  EP 0005059 B1 1982-11-24     Title (TI): A semiconductor device having a layered structure and a method of making it. Inventor: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Applicant: WESTERN ELECTRIC CO (US) Application Number: EP19790300652 1979-04-20 Priority Number(s): US19780899402 1978-04-24 EPC-Classification: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Classification: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L21/203; H01L29/15; H01L29/778  EP 0005059 A3 1979-12-12     Title (TI): A semiconductor device having a layered structure and a method of making it. Inventor: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Applicant: WESTERN ELECTRIC CO (US) Application Number: EP19790300652 1979-04-20 Priority Number(s): US19780899402 1978-04-24 EPC-Classification: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Classification: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L21/203; H01L29/15; H01L29/778  EP 0005059 A2 1979-10-31  SR   Title (TI): A semiconductor device having a layered structure and a method of making it. Inventor: DINGLE RAYMOND;   GOSSARD ARTHUR CHARLES;   STORMER HORST LUDWIG Applicant: WESTERN ELECTRIC CO (US) Application Number: EP19790300652 1979-04-20 Priority Number(s): US19780899402 1978-04-24 EPC-Classification: H01L21/203C6; H01L29/15B2C; H01L29/778C2 IPC-Classification: H01L29/205; H01L21/203; H01L29/10; H01L29/207; H01L29/36; H01L29/80 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L21/203; H01L29/15; H01L29/778  US 6194303 A No Date  CA

EP 0297778 A3 1991-04-03     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16  EP 0320110 A3 1990-05-09     Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88  EP 0320110 A2 1989-06-14  SR   Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880310336 1988-11-03 Priority Number(s): US19870117583 1987-11-05 EPC-Classification: G11C11/38; G11C11/56; H01L29/88R IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L29/88  EP 0297778 A2 1989-01-04  SR   Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: EP19880305716 1988-06-22 Priority Number(s): US19870068974 1987-07-01 EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: G11C11/56; H01L29/66; H03B19/00 AI-Classification: G11C11/56; H01L29/76; H01L29/88; H03B19/16  WO 8702478 A1 1987-04-23  SR   Title (TI): NONLINEAR AND BISTABLE OPTICAL DEVICE Inventor: MILLER DAVID ANDREW BARCLAY (US) Applicant: AMERICAN TELEPHONE & TELEGRAPH (US) Application Number: WO1986US02107 1986-10-03 Priority Number(s): US19850785546 1985-10-08 EPC-Classification: G02F1/017; G02F1/017L; G02F3/02S; H01L31/101 IPC-Classification: G02F1/17; G02F1/015; G02F1/35; G02F3/00; H01L31/02 CI-Classification: G02F1/01; G02F3/00; H01L31/101 AI-Classification: G02F1/017; G02F3/02; H01L31/101